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| ADVANCE TECHNICAL INFORMATION DSEE15-06CC HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface IFAV = 15 A VRRM = 600 V trr = 30 ns VRRM V 600 VRRM V 300 Type ISOPLUS 220 E153432 DSEE15-06CC 1 2 3 Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg TL Ptot VISOL FC Weight Conditions TC = 115C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 2.5 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 35 15 110 0.8 0.2 -55...+175 175 -55...+150 A A A mJ A C C C C W V~ Applications g Features Isolated back surface* 1.6 mm (0.063 in) from case for 10 s TC = 25C 50/60 Hz RMS; IISOL 1 mA Mounting force typical 260 95 2500 2 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (<15pF) Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 11...65 / 2.5...15 N / lb Symbol IR VF RthJC RthCH trr IRM Conditions TVJ = 25C IF = 15 A; VR = VRRM TVJ = 125C TVJ = 25C Characteristic Values typ. max. 100 0.5 1.25 1.7 1.6 0.6 A mA V V K/W K/W ns 2.7 A TVJ = 150C VR = VRRM Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch IF = 1 A; -di/dt = 200 A/s; VR = 30 V VR = 100 V; IF = 25 A; -diF/dt = 100 A/s TVJ = 100C 30 2 Notes: Data given for TVJ = 25OC and per diode unless otherwise specified Diodes connected in series Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse test: pulse Width = 300 s, Duty Cycle < 2.0 % See DSEP 15-03A data sheet for characteristic curves. DS98827B(07/03) (c) 2003 IXYS All rights reserved IXYS reserves the right to change limits, test conditions and dimensions. DSEE15-06CC ISOPLUS220 Outline NOTE: 1. Bottom heatsink (Pin 4) is electrically isolated from Pin 1, 2 or 3. 2. Pin connections: 1 - Cathode 2 - Anode/Cathode 3 - Anode |
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